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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21d.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34T/483JR55
Repositorysid.inpe.br/mtc-m21d/2022/11.21.12.14   (restricted access)
Last Update2022:11.21.12.14.48 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21d/2022/11.21.12.14.48
Metadata Last Update2023:01.03.16.46.24 (UTC) administrator
DOI10.3390/ma15217416
ISSN1996-1944
Citation KeySierraGomezSilFraCorTra:2022:SuMoSp
TitleSurface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations
Year2022
MonthNov.
Access Date2024, May 19
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size4398 KiB
2. Context
Author1 Sierra Gomez, Javier
2 Silva Neto, José Vieira da
3 Fraga, Mariana Amorim
4 Corat, Evaldo José
5 Trava-Airoldi, Vladimir Jesus
Resume Identifier1
2
3
4 8JMKD3MGP5W/3C9JH33
ORCID1 0000-0002-2635-6254
2
3 0000-0001-6976-8550
Group1 CMS-ETES-DIPGR-INPE-MCTI-GOV-BR
2 CMS-ETES-DIPGR-INPE-MCTI-GOV-BR
3
4 COPDT-CGIP-INPE-MCTI-GOV-BR
5 COPDT-CGIP-INPE-MCTI-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Universidade Presbiteriana Mackenzie
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 javier.sierra@inpe.br
2 jvneto.ifsp@gmail.com
3
4 evaldo.corat@inpe.br
5 vladimirjta@gmail.com
JournalMaterials
Volume15
Number21
Pagese7416
Secondary MarkA1_ENGENHARIAS_I A2_MATERIAIS B1_ODONTOLOGIA B1_ENGENHARIAS_II B2_QUÍMICA B2_CIÊNCIAS_BIOLÓGICAS_II B2_BIOTECNOLOGIA B2_ASTRONOMIA_/_FÍSICA
History (UTC)2022-11-21 12:15:23 :: simone -> administrator :: 2022
2022-12-08 10:06:24 :: administrator -> simone :: 2022
2022-12-20 13:16:00 :: simone -> administrator :: 2022
2023-01-03 16:46:24 :: administrator -> simone :: 2022
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
Keywordssingle crystal diamond
microwave plasma-assisted CVD
morphology
defects
homoepitaxial growth
AbstractSingle crystal diamond (SCD) is a promising material to satisfy emerging requirements of high-demand fields, such as microelectronics, beta batteries and wide-spectrum optical communication systems, due to its excellent optical characteristics, elevated breakdown voltage, high hardness and superior thermal conductivity. For such applications, it is essential to study the optically active defects in as-grown diamonds, namely three-dimensional defects (such as stacking faults and dislocations) and the inherent defects arising from the cultivation method. This paper reports the growth of SCD films on a commercial HPHT single-crystal diamond seed substrate using a 2.45 GHz microwave plasma-assisted chemical vapor deposition (MWPACVD) technique by varying the methane (CH4) gas concentration from 6 to 12%, keeping the other parameters constant. The influence of the CH4 concentration on the properties, such as structural quality, morphology and thickness, of the highly oriented SCD films in the crystalline plane (004) was investigated and compared with those on the diamond substrate surface. The SCD film thickness is dependent on the CH4 concentration, and a high growth rate of up to 27 mu m/h can be reached. Raman spectroscopy, high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), surface profilometry and optical microscopic analyses showed that the produced homoepitaxial SCD films are of good quality with few macroscopic defects.
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CMS > Surface Morphology and...
Arrangement 2urlib.net > BDMCI > Fonds > Produção a partir de 2021 > CGCE > Surface Morphology and...
Arrangement 3urlib.net > BDMCI > Fonds > Produção a partir de 2021 > CGIP > Surface Morphology and...
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4. Conditions of access and use
Languageen
Target Filematerials-15-07416.pdf
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Reader Groupadministrator
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Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3F358GL
8JMKD3MGPCW/46KTFK8
8JMKD3MGPCW/46KUES5
Citing Item Listsid.inpe.br/bibdigital/2022/04.03.23.11 4
sid.inpe.br/bibdigital/2013/10.14.21.39 1
DisseminationWEBSCI; PORTALCAPES; SCOPUS.
Host Collectionurlib.net/www/2021/06.04.03.40
6. Notes
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